DRV8353: Transient 200-ns high-side source sense pin voltage (SHx)

Sebastian Ausserwoeger

Part Number: DRV8353
Other Parts Discussed in Thread: DRV8301

Hi,

I recently checked out the datasheet and specs of the new DRV835x driver family. Since the part seems very sophisticated, we are currently planning to use the part in one of our customer's new designs. One thing that bothers me though, is the DRV835x's "Transient 200-ns high-side source sense pin voltage (SHx)" listed under absolute maximum ratings. The lower limit of -10V is actually really good compared to other half-bridge drivers, but the upper limit of VDRAIN + 10V limits phase voltage (VS) overshoot to 10V, if I understood this correctly. I have done lots of motor power electronics designs (also with TI drivers like DRV8301) and from my experience, keeping VS overshoot to less than 10V referenced to the dc-link voltage, is very stringent and hard to achieve when fast switching speeds are mandatory.

Does the DRV835x driver exhibit a higher VS overshoot tolerance if the overshoot duration is reduced to values significantly shorter than 200ns - let's say 10ns?

Does DRV8301 exhibit the same limitations concerning VS overshoot? The reason why I am asking this, is that we have been using this driver in lots of designs in the past years and until now there were no complaints of the parts failing, even if VS overshoot of 15-20V occurred (duration of overshoot: 5-10ns). Actually, according to our customer's feedback, the design is very robust.

Since we need to make a swift decision, if we will use DRV835x in the next design I am looking forward to a quick reply.

Thanks in advance.

Best regards,

Sebastian

over 4 years ago

0 Adam Sidelsky over 4 years ago

TI__Guru 61300 points

Sebastian,

Thanks for posting on the MD forum!

There is a chance that the driver could handle higher transients for less time than 200nS but this is very hard to quantify and qualify. In general I would say that if the energy is the same then i would be less concerned but always test for yourself.

The DRV8301 is a different process/technology/design team so unfortunately I cannot compare the two.

Regards,

-Adam

0 Sebastian Ausserwoeger over 4 years ago in reply to Adam Sidelsky

Prodigy 220 points

Hi Adam,

thanks for the quick response.

So, if I understood you correctly, the transient voltage limitation results from injected currents and power dissipation rather than from dielectric breakdown of internal structures?

Best regards,

Sebastian

0 Sebastian Ausserwoeger over 4 years ago in reply to Sebastian Ausserwoeger

Prodigy 220 points

Hi Adam,

I am just digging through the details of the DRV835x datasheet and another question emerged.

This may be a little off-topic but what's the reason that the shunt amplifiers of the DRV835xR versions (integrated buck) only exhibit a unity gain bandwidth of 1MHz compared to 10MHz of the non-R versions? This is pointed out in the electrical characteristics section on page 15 of the datasheet.

We wanted to use the R-version but 1MHz for low-side current monitoring is actually not feasible.

Thanks and best regards,

Sebastian

0 Adam Sidelsky over 4 years ago in reply to Sebastian Ausserwoeger

TI__Guru 61300 points

Sebastian,

The limitations are mostly due to power dissipation but dielectric breakdown is of course always a concern.

Let me check on the UGB.

Regards,

-Adam

0 Adam Sidelsky over 4 years ago in reply to Adam Sidelsky

TI__Guru 61300 points

Sebastian,

That 1MHz line is an error, the UGB for both devices is 10MHz actually. We will be updating the datasheet soon.

Regards,

-Adam

0 Sebastian Ausserwoeger over 4 years ago in reply to Adam Sidelsky

Prodigy 220 points

Alright.

Thanks for the update, Adam.

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DRV8353: Transient 200-ns high-side source sense pin voltage (SHx)