Hey guys,
the datasheet doesn't confirm a possible operation in 13 MHz operation frequency with 50% dc.
gate C_iss = 150 pF.
please confirm the possibility.
Thanks
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Hey guys,
the datasheet doesn't confirm a possible operation in 13 MHz operation frequency with 50% dc.
gate C_iss = 150 pF.
please confirm the possibility.
Thanks
Hi Martin,
Thank you for reaching out!
Regarding this, we do not specify what frequency you can run at, because it depends on thermals of the device. How hot the device gets includes several variables, such as gate charge or capacitance, VDD voltage, switching frequency, ambient temperature, etc.
You can reference Section: 9.2.1.1 Power Dissipation from the datasheet:
And there you can calculate your power dissipation and then reference the thermal resistance of the device to see how much power dissipation you can get away with. If dissipation is a concern, you can increase the gate resistor values to have more of the dissipation occur in the gate resistors instead of the driver. BUT, this will come at a cost of increase rise and fall times of the MOSFET gate, which could introduce more losses within the MOSFET. So, it is important to balance gate resistance values. Typically 1 to 10 Ohms is a good start.
If gate resistors you are using are over a couple Ohms, consider using this equation instead (This was taken from our UCC2751x driver datasheet):
This will give you a slightly more accurate answer.
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I hope this makes sense and helps you come to a conclusion. If you need run your calculations past me, please feel free. Otherwise, if I answered your question, please click the green button.
Thanks!
Aaron Grgurich