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LP8866-Q1: Parameters design & related sockets selection of LP8866-Q1

Huanfeng Ren
Prodigy 70 points
Part Number: LP8866-Q1
Other Parts Discussed in Thread: LP8866EVM

Dear team,

I am referencing LP8866EVM user's guide's schematic diagram to realize to function below:

Could you please help me to recommend the part number of the suitable MOSFET for replacement sockets?

Besides, do I need to change the inductance value, switching frequency or other parameters? How should I change them?

Where could I find the reference schematic diagram of the LP8866 used as SEPIC topology?

Many thanks for your answer.

BR,

Huanfeng.

  • 0
    TI__Genius 15780 points

    Huanfeng, 

    An N type MOSFET with at least 25% higher voltage rating than maximum output voltage must be used. Current rating of switching FET should
    be same or higher than inductor rating. RDSON must be as low as possible, less than 20 mΩ is recommended. Thermal resistance (RθJA) must also be low to dissipate heat from power loss on switching FET. You can use device like NVMFS5C673NLWFAFT1G which used on EVM board. 

    For detailed design, you may refer to  8 Application and Implementation which described in datasheet. 

    For Sepic, please refer to datasheet : 8.2.3 SEPIC Mode Application