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LP8866-Q1: boost FET selection guideline

Part Number: LP8866-Q1


Could you please provide a brief guideline of how to select the boost FET? What critaria will be applicable to the boost FET for "VGD/(RDS_ON + total resistance to gate input of SW FET) must not be higher than 2.5 A"?

Thank you.


Oguri (TIJ automotive FAE)

  • Hi, Oguri, 

    May I know where the quote is from and I'd like to check it.  

    Generally, an N type MOSFET with at least 25% higher voltage rating than maximum output voltage must be used. Current rating of switching FET should be same or higher than inductor rating. RDSON with less than 20 mΩ is recommended. Thermal resistance (RθJA) must also be low to dissipate heat from power loss on switching FET. A resistance is recommended between GD pin and Switching FET's gate terminal to control the rising/falling time of the switching FET.