Other Parts Discussed in Thread: BQ34110, EV2400, BQSTUDIO
Hi, I am trying to configure BQ34110_EVM without EV2400 and BQ studio. I Have Written functions for Writing, reading data flash as well as for subcommand reading also. I am using 12.8v LifePo4 Battery and configured BQ34110. After Configuring SOC shows Zero and even Voltage reading is not accurate. Current reading (Charging and Discharging), TTE, TTF are reporting correct. please help us to configure BQ34110 correctly. Some of the values are given as
WriteIntoDataFlash(BQ34110_VOL_DIV_ADDR, 16222);
WriteIntoDataFlash(BQ34110_CHARGE_VOLT1_T2_ADDR, 3550);
WriteIntoDataFlash(BQ34110_CHARGE_VOLT2_T3_ADDR, 3650);
WriteIntoDataFlash(BQ34110_CHARGE_VOLT3_T4_ADDR, 3550);
WriteIntoDataFlash(BQ34110_TAPER_CURR_ADDR, 50);
WriteIntoDataFlash(BQ34110_CHARGE_VOL_A_ADDR, 3350);
WriteIntoDataFlash(BQ34110_CHARGE_VOL_B_ADDR, 3400);
WriteIntoDataFlash(BQ34110_CHARGE_VOL_C_ADDR, 3450);
WriteIntoDataFlash(BQ34110_CHARGE_VOL_D_ADDR, 3500);
WriteIntoDataFlash(BQ34110_CHARGE_VOL_E_ADDR, 3550);
WriteIntoDataFlash(BQ34110_CHARGE_VOL_F_ADDR, 3600);
WriteIntoDataFlash(BQ34110_CHARGE_VOL_G_ADDR, 3650);
WriteIntoDataFlash(BQ34110_CHARGE_VOL_H_ADDR, 3700);
WriteIntoDataFlash(BQ34110_LOW_SET_THREHOLD_ADDR, 2625);
WriteIntoDataFlash(BQ34110_LOW_CLEAR_THRESHOLD_ADDR, 2725);
WriteIntoDataFlash(BQ34110_HIGH_SET_THRESHOLD_ADDR, 3650);
WriteIntoDataFlash(BQ34110_HIGH_CLEAR_THRESHOLD_ADDR, 3550);
WriteIntoDataFlash(BQ34110_NUM_SERIES_CELL_ADDR, 4);
WriteIntoDataFlash(BQ34110_DESIGN_CAPA_ADDR, 12000);
WriteIntoDataFlash(BQ34110_VOL_0_DOD_ADDR, 3355);
WriteIntoDataFlash(BQ34110_VOL_10_DOD_ADDR, 3284);
WriteIntoDataFlash(BQ34110_VOL_20_DOD_ADDR, 3283);
WriteIntoDataFlash(BQ34110_VOL_30_DOD_ADDR, 3277);
WriteIntoDataFlash(BQ34110_VOL_40_DOD_ADDR, 3248);
WriteIntoDataFlash(BQ34110_VOL_50_DOD_ADDR, 3242);
WriteIntoDataFlash(BQ34110_VOL_60_DOD_ADDR, 3238);
WriteIntoDataFlash(BQ34110_VOL_70_DOD_ADDR, 3229);
WriteIntoDataFlash(BQ34110_VOL_80_DOD_ADDR, 3184);
WriteIntoDataFlash(BQ34110_VOL_90_DOD_ADDR, 3146);
WriteIntoDataFlash(BQ34110_VOL_100_DOD_ADDR, 2008);
WriteIntoDataFlash(BQ34110_DESIGN_VOL_ADDR, 3200);
WriteIntoDataFlash(BQ34110_VOL_THRESHOLD_FD_ADDR, 2500);
WriteIntoDataFlash(BQ34110_CLEAR_VOL_THRESHOLD_FD_ADDR, 2600);
WriteIntoDataFlash(BQ34110_VOL_THRESHOLD_FC_ADDR, 3650);
WriteIntoDataFlash(BQ34110_CLEAR_VOL_THRESHOLD_FC_ADDR, 3550);
WriteIntoDataFlash(BQ34110_VOL_THRESHOLD_TD_ADDR, 2700);
WriteIntoDataFlash(BQ34110_CLEAR_VOL_THRESHOLD_TD_ADDR, 2800);
WriteIntoDataFlash(BQ34110_VOL_THRESHOLD_TC_ADDR, 3650);
WriteIntoDataFlash(BQ34110_CLEAR_VOL_THRESHOLD_TC_ADDR, 3550);
WriteIntoDataFlash(BQ34110_LEARNED_FULL_CHARGE_CAPA_ADDR, 12000);
WriteIntoDataFlash(BQ34110_OVERLOAD_CURR_ADDR, 18545);
