CSD17483F4: IDSS_max at Ta=85C

Hello Muk-san,

Thanks for the inquiry. I pulled up the characterization data collected during product development at -55, -25, +25, +75, +125 and +150°C. When I plot this data, I estimate typical IDSS at 85°C is ~225nA and max IDSS is <500nA. These are for guidance and TI only guarantees and tests what is specified in the datasheet. I'm including a link below to a technical article on temperature variation of FET parameters which you may find useful.

https://e2e.ti.com/blogs_/b/powerhouse/posts/what-s-not-in-the-power-mosfet-data-sheet-part-1-temperature-dependency

Best Regards,

John Wallace

TI FET Applications