Other Parts Discussed in Thread: CSD17581Q3A, CSD16401Q5,
Dear Team,
After a lot of experiments, we found that within the MOS tube specification, no matter what the OCP value is, once the overcurrent protection is triggered, the MOS tube will be protected for a short time, and then it will be broken down, and the gap between G, D or G, GND increases. RC has nothing to do with it.
Debugging process: Change R sense from 0.001Ω to 0.006Ω, reduce the OCP point from 25A to 4.17A. Power on the power supply, load CC pull, slowly increase to 3.9A, trigger OCP protection, and the current is the largest at this time value is 4.2A,
4.2A is far smaller than the specification of the MOS tube [MOSFET N-CH CSD17581Q3A 30V 60A SON3X3 TI], but the MOS tube is broken down after about 12s. The waveform is as follows:
This problem is more urgent, and many projects have similar problems. Please guide us to find out why, thank you very much!
Many Thanks,
Jimmy
Many Thanks,
Jimmy