(1). About UVLO, the electrical characteristics rise is 2.6V typ. (2.4V-2.8V)
But block diagram description is 3.2V.
Which is correct? (Which is more accuracy?)
(2). About VSLEEP, the electrical characteristics rise is 400mV typ. (280mV-520mV)
But block diagram description seems to 200mV.
Which is correct? (Which is more accuracy?) Or Is block diagram not correct on this matter?
(I notify that block diagram is compared SRN and ACN, but electrical characteristics is compared VCC and SRN.)
(3). Why BATFET ON condition of "VACN < VSRN +200mV" is not "VCC < VSRN +200mV" ?
Or is VCC < VSRN +200mV correct? (ACOK related condition description is VCC, but BATFET related condition description is ACN. Was this done on purpose? )
And also, this 200mV is same as Vsleep of table (2)? (sleep falling treshold typ.25mV?) or other fixed 200mV?
Best regards,
