Other Parts Discussed in Thread: CSD13381F4, BQ2980, BQ2982
I'm looking at this part for protecting a rechargeable lithium coin cell, with maximum charge and discharge current about 50mA. Sizing the FETs for this is difficult; the math says I want about 1.8 ohms for the current detection to work.
Would it make more sense to use relatively low Rds(on) FETs (e.g. CSD13381F4) with a fixed resistor in the path? Maybe put the resistor between the FETs (D to D) or between the S node of the DOUT FET, and the VSS pin of the BQ29707?
Thanks!