I haven't found any discussion, white papers, or forum questions about using SiC or GaN main switch FETs for BQ battery protection devices.
Is this discounted because of the drive requirements and reduced Vgs that have to be observed or is price sensitivity limiting their adoption ? I assume manufacturing volumes will drive device cost down so are they being considered now for future BMS designs ?
For surge robustness and low Rds(on) energy losses, these newer parts are attractive.
This TI discussion promoted the surge robustness of TI GaN devices:
Do TI support people have comments or can you direct me to white papers; apologies if I failed to find these ?
All the best