Hi Team,
Could you please help me to understand the source current of LM5064? Is there only a constant 52uA to slowly turn on the MOS? Or will accumulate to several hundred mA to finally turn on the MOS?
BRs,
Francis
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Hi Team,
Could you please help me to understand the source current of LM5064? Is there only a constant 52uA to slowly turn on the MOS? Or will accumulate to several hundred mA to finally turn on the MOS?
BRs,
Francis
Hi Francis,
52 μA is the maximum gate current to slowly turn on the MOSFET. In Hot Swap applications, the MOFETs are turned on slowly in a controlled way to limit the inrush current.
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Hi Avishek,
Another question:
What about the curve of ig? Or whether the VGATE final value will be impacted by the value of gate source current(gate source current more large, VGATE final value more high)?
Francis
BRs
Hi Francis,
The final GATE voltage with respect to VEE is fixed at typical value of 12.6 V by using a clamping diode from GATE to VEE as shown in below image. There is no impact of Ig on this voltage.
Hi Avishek,
Very clear, thanks a lot.
For the current/power limit, could you please help me further understand whether the current of GATE will be a sink current, I mean, whether the 52 uA source current subtract the current/power limit sink current will finally be a sink current outflow from GATE pin?
BRs,
Francis
Hi Francis,
During the power/current limit, the GATE will be regulated (sink current) to limit the power loss across the MOSFET (VDS x ID) or the current flowing through the MOSFET (ID). 52 μA sourcing current will be switched off.
Hi Avishek,
Based on your answer, I am a little confuse why we need 3 pull-down currents - 4.1mA, 111mA and current/power limit. From my understanding, 4.1mA pull-down current is used for limiting in-rush, current/power limit is used for maintaining SOA, so what about the 111mA pull-down current?
BRs,
Francis
Hi Francis,
The purpose of 111 mA pull down current is clearly mentioned in the datasheet.