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BQ76952: Write and read threshold values in respective data memory locations.

Part Number: BQ76952

Dear TI expert,

we have taken as project to design and develop battery management system based on BQ7695202 and host microcontroller STM32G0B1RBT6.

we are establishing the I2C communication as follows.

1. we want to write and read a value for COV threshold.Prototype BMS.pdf

2. as per technical reference manual the command is 0X9275.

3. we are doing it using direct command as write and read.

4. we are using I2C HAL function for write and read value on address 0x9275. I want to write value 50 mV..

5. actual code becomes for point no 4 is : i2c_write(0x10, 0x9275, 50 , 1000); (write function, slave address, command, value, delay)

i2c_read(0x10, 0x9275, data read, 1000);  ( Read function, slave address, command, value, delay)

Issue faced: When we are writing the 50 and verifying the value by reading the same location we are getting 0X0

Query: Are there any specific things which have to be taken care in I2C communication in BQ7695202  to read and write the value in the data memory threshold since using the same Hall function (WR and READ) we are able to write and read data in EEPROM. Secondly using the same read function we are able to read Cells voltages from their respective location which means our hardware is ok. We have studied the Technical reference manual but could not find a clue.

Addressing this issue will be highly appreciated.