CSD18509Q5B difference between NexFET and GANFET

Hello Yogini,

Thanks for the inquiry. TI NexFETs are silicon power MOSFETs. A GANFET is a gallium nitride (GaN) FET. At this time, TI does not make any discrete GaN devices. Unlike our discrete power MOSFETs (NexFET), all of TI's GaN products integrate the driver and the 600V to 650V GaN FET into one package. Discrete GaN FETs are available from other semiconductor companies but are typically higher cost than silicon FETs. GaN devices are typically lower charge than comparable silicon FETs and can be operated at higher switching frequencies. Silicon FETs are still very cost competitive and offer good performance in motor drive applications.

Best Regards,

John Wallace

TI FET Applications