CSD17484F4: ESD diode forward voltage

Hello Jef,

Thanks for your interest in TI FETs. The CSD17484F4 has single-ended ESD protection diode between gate and source. If the source is voltage is higher than the gate voltage by more than a junction drop then the diode will be forward biased clamping VGS at about -0.7V. If this is an issue, then TI also offers the CSD17382F4 with back-to-back ESD protection structure in the same footprint. Please note, the back-to-back ESD structure results in higher leakage current, IGSS and IDSS. Please see the technical article at the link below for more information on the ESD protection used in TI FETs.

https://e2e.ti.com/blogs_/b/powerhouse/archive/2020/06/22/what-type-of-esd-protection-does-your-mosfet-include

Best Regards,

John Wallace

TI FET Applications

Hi John,

Thank you for the quick reply. This answers my question.

Kind regards,

Jef