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UCC21710-Q1: UCC21710-Q1

Part Number: UCC21710-Q1
Other Parts Discussed in Thread: UCC21710,

Hello Team,

I am planning to use UCC21710 in one of my project. I am having few queries related Over current pin of UCC21710-Q1.

 

I have gone through datasheet of UCC21710-q1 IC. It is having overcurrent protection pin,. (Pin no 2, OC)

So I would like to understand how to use this pin in for SiC mosfet.

Do we any application note of this IC with SiC MOSFET?

Most of data available with IGBT. But we cannot use desat feature in SiC mosfet which is also not recommended by Texas.

So I would like to understand how to use this pin in for SiC mosfet.

I am planning to use this pin with shunt resistor in MOSFET leg.

Do we any application note of this IC with SiC MOSFET?

 

Thanks and Regards,

Shubham Bajpeyee

+91 8484 860 263 

  • Hi Shubham,

    Thanks for reaching out. DESAT is the most common overcurrent protection circuit and is the default choice for many applications because it is simple to implement. However, there are inherent differences between IGBTs and SiC MOSFETs (their I-V curve) that make DESAT protection better suited for IGBTs than SiC MOSFETs. 

    For UCC21710-Q1, please refer to section 9.2.2.6.3 (page 39) of the datasheet which talks about how the OC pin can be used for both IGBT or SiC based on shunt resistor. In the section just before that (9.2.2.6.2) the datasheet also talks about using OC pin as DESAT for both IGBT & SiC modules. You can also refer to page 33 of the app note mentioned below:

    SiC Gate Driver Fundamentals e-book (ti.com)

    Please let me know if you have further question or clarifications on the same. 

    Best,

    Pratik

  • Hello Pratik, I have already gone through Section 9.2.2.6.3.

    I would like to know calculations and selection criteria for for RFLT and CFLT. 

    how i can make sure that my MOSFET is getting turn off in right time. 

    do you have any application note with calculations?

    can we have a short call to discussion?

    Regards

    Shubham Bajpeyee

  • Hi Shubham,

    Please refer to the typical values below:

    The value selection for Rshunt highly depends on the SiC MOSFET that is being used and it's I-V curve. If you can provide those details, we can help guide you more. 

    Best,

    Pratik

  • Hello Pratik, 

    We are planning to use sct018h65g3ag SiC MOSFET for our application.

    Datasheet Link : 

    https://www.st.com/en/power-transistors/sct018h65g3ag.html

    You can suggest the values now, but We would like to understand detail calculations.

    Call for detail discussion will be helpful for us.

    Regards

    Shubham Bajpeyee

    +91 8484 860 263

  • we would like to do overcurrent detection at 20A. and we would like to know how MOSFET will be turn off ? 

    is it internally pull down and Fault will be communicated? or only fault will be communicated and we have to cut down the PWM lines and Power supply?

  • Hi Shubham,

    Thanks for the follow up question and the details.

    Rs = (0.7V-0V)/20A = 35 mΩ. This is how Rshunt is designed based on current that needs to detected for over current protection.

    The RFLT & CFLT are just R & C filter and the value recommended above should be fine. One thing to be aware of is the C_FLT value, the reason we have provided a range is, if you use 100pF cap, the response time will be faster, but noise performance wouldn't be as good as the 10nF cap but using the 10nF cap will add the RC time constant to the OC pin detection.

    As shown below, that part is affected by the RC filter hence you need to choose the capacitor value based on how fast you want the response and based on how much noise you want to filter at the OC pin.

    To answer your second part of the question, we have deglitch filter time "tOCFIL" - (120ns typ) after which the OUTH goes to High Z mode after OC has been detected. The time after which the OC is detected and the FLT pin in the IC goes low is given by "tOCFLT" - (530ns) which is way shorter than the short circuit withstand time of SiC MOSFETs and then we have a soft turn off mechanism which starts when the GATE signal starts to go low until the GATE voltage hits VCLAMPTH and then when OUTL goes low. 

    You don't have to cut down PWM lines or power signals since once the FLT has been communicated and the nFLT pin is pulled low and the gate driver OUT is pulled low.

    We believe and hope this answers your question. Please let me know if you still have further questions.

    Best,

    Pratik

  • Hello Pratik, 

    I have already selected Rshunt values. I am more interested in Rflt and Cflt. 

    Because this timing can damage my MOSFET.

    Can you please guide us how to select right values using I_V characteristic of MOSFET?]

    Regards

    Shubham

  • Hi Shubham,

    As explained earlier, RFLT & CFLT are for filtering purposes. I've also shared the recommended values for them before, RFLT = 1kΩ and CFLT = 100pF-10nF (XR7 recommended). The value of CFLT has a range because it highly depends on the system noise you want to filter out and the cut-off frequency. 10nF would have higher cut-off frequency and filter more noise however the RC time constant will be more (10us) however if you choose 100pF cap you won't be able to filter the frequency of noise you can with 10nF, but you'll end up with 100ns RC time constant. Given that the short circuit withstand time for SiC MOSFETs is very less (example, can be upto 3.6us for 800V bus voltage), we would recommend using a small cap (100pF-10pF) and design the system layout to be more robust in terms of noise.

    Hope this helps!

    Best,

    Pratik