Other Parts Discussed in Thread: CSD18510KCS
Hello Team,
I am planning to use the N channel MOSFET CSD18511KCS in one of our applications.
The MOSFET will be used as a switch to on/off 12V 30A of current.
The Gate of the MOSFET will be driven from a gate driver circuit.
So the power dissipation across the FET will be 30A*30A*3.2mΩ= 28.8W which is below the rated 188W of the MOSFET.
The MOSFET will be used as a low-side switch.
But, the RDS of the FET will increase with the increase in the temperature. This (I^2)*R increase will further increase the RDS of the FET.
How to calculate the rise in temperature due to the current flow through the MOSFET?
How to use the RθJC and RθJA values of the MOSFET to calculate the thermal characteristics of the MOSFET?