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LP5860: Impact of gated LEDs on deghosting features

Part Number: LP5860

Hi Experts,

I am implementing an LED design where I need a separate HW control line to gate a subset of LEDs being driven by the LP5860.  I am thinking of using a low side FET as a switch but I am not sure if this will impact upside or downside deghosting features.  99% of the time, the _EN signal will be asserted so I don't think the case where _EN is toggling is critical.

Below is a snippet of my schematic showing how I intend to do the gating.  Would the gating method here be appropriate?  Would the deghosting features be impacted?

_EN is 5V logic.  VLED is 5V. VCC is 3.3V

  • Hi Robert,

    The de-ghosting function only work during line switching.

    For your application, I think it will not be impacted with upside de-ghosting features. But for downside de-ghosting features, it will pull up the CS pin to a fix level during line switching. Therefore, I suggest you can do some bench test and capture some waveform to verify it.

    From my side, I think it will not impact the de-ghosting features. To be on the safe side, I suggest you to do some test on bench to verify it.

    Thanks and best regards,