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CSD18541F5: Vgs(th) of CSD18541F5

Tadahiko Matsumoto
Prodigy 10 points
Part Number: CSD18541F5

Hello, I have a question regarding datasheet of CSD18541F5. In the Product Summary table on the first page, Vgs(th) is described as 1.75V. On the other hand, in the graph of Figure 4 plateau portion by mirror effect exist at about 3V. So it means Vgs(th) is about 3V. Why are those data contradicted? And how much is correct Vgs(th) of CSD18541?

  • 0
    TI__Mastermind 32165 points

    Hello Matsumoto-san,

    Thanks for your interest in TI FETs. MOSFET threshold voltage, Vgs(th), and plateau voltage, Vgs(pl), are two different quantities. Vgs(th) is defined as the gate-source voltage where the drain current is 250μA. This is the specification in the datasheet and where the devices are tested in production. Vgs(pl) is defined as the gate-source voltage where dVgs/dt is a minimum (i.e. Vgs waveform flattens out). Plateau voltage is not specified in the datasheet nor is it tested in production. Characterization data for both Vgs(th) and Vgs(pl) was collected during product development. If you look at Figure 4, the typical threshold voltage of 1.75V occurs before the plateau voltage which is typically around 3V. Please let me know if you have any questions.

    Best Regards,

    John Wallace

    TI FET Applications