Hi Team,
We are learning that how to define and measure the SOA of MOSFET.
According to TI training, https://www.ti.com/zh-tw/video/4850608508001
We list the below step to measure, feel free to correct us if something wrong.
Step1: Operate the MOSFET(DUT) under saturation mode, so the ID only depends on VGS voltage.
Step2: Provide a VDS voltage by external power supply.
Step3: Provide a VGS and generate an ID current.
Step4: If MOSFET still survives, go back to Step3 and increase VGS voltage.
Step5: redo Step3 & Step4 until MOSFET damaged. Then, we can get plot a point in the SOA figure (VDS and ID)
I feel the procedure is reasonable, but I am not sure if my understanding is correct because I don’t use a current source in this setup.
Regards,
Roy
