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BQ25756: Using GAN FET chip (EPC23102ENGRT) with the Buck Boost Controller

Part Number: BQ25756


We have previously made some queries. The case number was CS2169510. Since it was closed, I am writing my next query as follos:

To reduce the Power Loss, we are more inclined to use GAN FET. Our selected component is EPC23102ENGRT. It has a built-in driver and we have to provide the Logic Level Signal to the high-side FET too. Since we do not have a complete internal architecture of BQ25756, I assume that it can be done by connecting the SW1 and SW2 pins to ground. Will this result in a 5V signal on HIDRV1 and HIDRV2 pins with reference to the GND? GAN FET block diagram is as follows:

Also can I use BTST1 and BTST2 pins to power VDRV in the above figure? I think the potential of these pins are 5V. If yes, may I connect these after two diodes, as shown below:

Thanks and Regards

  • Hi Shahzad,

    VDRV could be connected to BQ25756 REGN.  Unfortunately, the BQ25756 SW1 and SW2 pins cannot be grounded and must be attached to the SW pins of the GAN modules.  That means that the BQ25756 HIDRVx signals sits at the SWx voltage, not ground.  Trying to level shift the HIDRVx drive outputs down to 5-0V without introducing delay relative to the LODRVx outputs would be difficult if not impossible.