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CSD18542KTT: Looking for N-FET with a very low IDSS to switch shunt branches

Part Number: CSD18542KTT
Other Parts Discussed in Thread: CSD19538Q2

Hi,

I had to choose a TI part to get this discussion started (CSD18542KTT), but that's probably not the FET I will use. I want to make a redesign of the low burden uCurrent from EEVblog. The uCurrent uses 3 shunt resistors/3 branches to measure the current:
10k Ohm for nA range
10 Ohm for uA range
0.01 Ohm for mA range

I want to make an auto switching uCurrent. The 3 branches will be controlled by a microcontroller and this microcontroller will also measure the current with integrated ADCs.
My problem are these branches. Especially the 10k branch. I will use probably use N-FETs to switch between the branches. Text will continue below. This is the schematic....

My problem is the 10k branch. If I disble the other branches (VGS=0) the leakage current through branch 2 and branch 3 must be very low(low IDSS). The shunt of branch 1 is 10k. But the leakage through branch 2 or 3 must be in the order of pico Amps or femto Amps to still have a good nA range. Is that possible? I think I should especially look for a N-FET with a very low IDSS. Which FET do you recommend? The max current is 2A. The max voltage is 60V. Do you recommend to have all N-FETs the same or should I choose for a different N-FET for the high current branch (0.01 Ohm/2A max)? But this FET must have a low IDSS also.
How about this IDSS... If the 10k shunt is active and the IDSS is 50nA, will there be a loss of 100nA through the other 2 branches or is that not the case because most current will go through the lower resistant 10k? I know, that's not a low value, but is it relative small againts the hopefully high resistance of the other branches?
Thanks in advance for your help.

Best regards,
Ad

  • Hello Ad,

    Thanks for your interest in TI FETs. For 60V max input voltage, you will probably want to use a higher voltage FET than 60V. Typically, you want to derate the maximum operating voltage to ~80% of BVDSS for regulation and transients. TI has 80V and 100V FETs but unfortunately, those devices have higher max IDSS (1μA max) specified in the datasheet. The smallest/lowest cost device is the CSD19538Q2, 100V NFET in 2x2mm SON package.I pulled up the characterization data collected during product development. The average IDSS (~50nA) is much lower than 1μA max at VDS = 80V specified in the datasheet. This is for design purposes only and TI only guarantees what is specified in the datasheet. Also, keep in mind, leakage currents have positive temperature and voltage coefficients as shown in the technical articles at the links below. I'm also including a plot of normalized IDSS vs. VDS from another 100V FET in the same family at the CSD19538Q2.At VDS = 60V, the leakage is about 75% of the leakage at VDS = 80V.All of TI's 80V and 100V FETs require a minimum VGS >=6V to guarantee on resistance. Our lower voltage FETs can be operated with lower gate drive voltage.

    I'm not quite sure I understand your question. If the FETs in branch 2 & 3 are turned off (VGS = 0V), there will be IDSS leakage current thru both branches. I'm not that affects branch 1.

    Temperature: https://www.ti.com/lit/ta/sszt206/sszt206.pdf

    Voltage: https://www.ti.com/lit/ta/sszt144/sszt144.pdf

    Please review and let me know what else I can do to help you.

    Best Regards,

    John Wallace

    TI FET Applications

  • Hello Ad,

    Following up to see if your issue has been resolved. Please let me know.

    Thanks,

    John

  • Hello Ad,

    Since I have not gotten a response from you, I assume your issue has been resolved and will close out this thread.

    Thanks,

    John