UCC25800-Q1: Information Regarding Integrated MOSFET

jesica N

Part Number: UCC25800-Q1
Other Parts Discussed in Thread: UCC25800

Tool/software:

Hello,

I am trying to build the UCC25800A-Q1 IC using basic blocks and simulate its behavior in SIMetrix, Can you please provide details of parasitic elements of MOSFET. It is not mentioned in datasheet.

3 months ago

+1 Steven Mappus1 3 months ago

TI__Mastermind 26275 points

Jesica,

Other than RDS(on), the parasitic details for the internal MOSFETs are not part of the parametric characterization and are therefore not published on the data sheet. Unlike an offline LLC using high-voltage power MOSFETs where the Coss can contribute to the resonant capacitance, the UCC25800 is a low-voltage, open loop driver using 40V, 600mA MOSFETs. The parasitic contribution from such low-voltage devices is negligible at the frequencies you will be designing and will be dominated by the external capacitive elements in the power stage.

Steve

0 jesica N 3 months ago in reply to Steven Mappus1

Prodigy 40 points

Ok Steven, Thanks for your response.

0 jesica N 3 months ago

Prodigy 40 points

Steven Mappus1 Hi Steven, I have chosen switching frequency more than resonance frequency, So obviously there will be some switching losses. I couldn't find information regarding gate resistance also in data sheet. Can you please help regarding gate resistance and Ciss.

0 Steven Mappus1 3 months ago in reply to jesica N

TI__Mastermind 26275 points

These parameters are not measured at test and therefore are not shown in the parametric table.

Steve

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UCC25800-Q1: Information Regarding Integrated MOSFET