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CSD19532Q5B: The most suitable MOSFET selection for solenoid consuming 40W peak energy

Part Number: CSD19532Q5B
Other Parts Discussed in Thread: CSD18543Q3A, CSD18541F5, UCC27531, UCC27614, UCC57108, CSD19538Q3A

Tool/software:

Hello everyone;

System Supply Voltage 48V;

We are working on robot actuator series.

We use solenoid as brake mechanism. It allows the robot arm to maintain its position when the power is cut.

This solenoid works with 48 volts. It has an internal resistance of 62 OHM. It draws 0.8A. We can say about 40 Watt. But short-term use is allowed at this value.

When there is no energy, the stroke is outside in order to lock the motor.

When energy is given, 48V pulls back and allows the motor to work.

This means that the solenoid is continuously fed with energy while the system is working.

While pulling the first tongue, 48 V can be given as a peak for a very, very short time.

Maybe about 1/4 of a second.

However, if this energy is given continuously, it heats up later and breaks down after 4-5 seconds.

While the stroke is inside the mechanism, it can hold it with a lower voltage. It only requires 48V for the first pullback. Then it can be fed with 5V to keep the stroke in the retracted position.

In short, we need a mosfet with a driver that is fed with PWM. A normal transistor will cause serious energy loss with PWM.

If there is no such product, what kind of product and what kind of configuration can you recommend?

  • Hello Alev,

    Thank you for you interest in TI FETs. I am not familiar with solenoid drive requirements. Can you share more details on how the FET is used to drive the solenoid? Is the FET ground referenced (i.e source is grounded and drain is connected to the solenoid) or floating (drain connected to supply, source connected to the solenoid)? For 48V, you would need to use at least a 60V FET. TI's FET product line does not make any devices with integrated drivers. The gate driver would need to be external. TI does make gate drivers in multiple configuration and also integrated solenoid drivers. You can find more information at the links below. I look forward to your response.

    https://www.ti.com/power-management/gate-drivers/overview.html?keyMatch=gate%20driver&tisearch=search-everything

    https://www.ti.com/motor-drivers/solenoid/overview.html?keyMatch=solenoid%20driver&tisearch=search-everything

    Best Regards,

    John Wallace

    TI FET Applications

  • Hi John;

    Actually, an H bridge with an internal fast diode to drive the solenoid in both directions would also do the job. I don't know, does Texas Instruments have such products?

    Or can the 48V DRV drivers produced for stepper motors do this job?

    But we need a mosfet and a driver to drive in at least one direction.

    Can you suggest us a GATE driver (I don't know if there is a single one) that we can use directly with CSD19532Q5B and a sample schematic configuration including the pin connection of the microcontroller?

  • Hi Alev,

    Thanks for the updated information. The CSD19532Q5B is a 100V FET in 5x6mm SON package. It is the lowest on resistance, 100V device in this package and may be higher performance and cost than your requirements dictate. Also, all of TI's 80V and 100V FETs require minimum VGS >=6V.  Because the current is only 0.8A, the conduction loss in the FET is very small and a lower cost FET with higher Rds(on) can probably be used.

    As an alternative, I'd recommend the CSD18543Q3A 60V N-channel FET in 3.3x3.3mm SON package. A lower cost, smaller alternative would be the CSD18541F5 60V N-channel FET in F5 FemtoFET package. What is the PWM frequency? The CSD18541F5 has 1.2kΩ nternal gate resistance which limits its switching frequency. TI makes many single low side drivers as shown at the link below. I'm only responsible for the FETs. I can reassign this thread to the gate drivers applications team to assist with your selection.

    Your other alternative, is a DRV type driver with integrated FETs. These products fall under a different applications team. Please let me know how you would like to proceed and I will reassign this thread to the appropriate applications team.

    https://www.ti.com/power-management/gate-drivers/low-side-drivers/products.html#480=1%3B1&sort=1130;asc&

    Thanks,

    John

  • Hi John;

    Can you recommend us a driver for both CSD19532Q5B and CSD18543Q3A?

    We can use both. Are there single drivers for these products?

    Thanks...

  • Hi Alev,

    I'm going to reassign this thread to the gate drivers applications team for a recommendation.

    Thanks,

    John

  • Hi John;

    I would like to ask one more thing, for the D1 ultra-fast diode in the schematic, considering the current, if CSD19532Q5B is used, what kind of specification do you suggest?

    Thanks...

  • Hi Alev,

    I'm an applications engineer covering gate drivers. It looks like you need a low-side gate driver, and I see that you are using 48V for your supply; however, we do not have any low-side gate drivers in our portfolio that supports that high of a voltage. Our highest VDD low-side driver is the UCC27531, which supports a maximum of 35V, and our newer generation drivers, UCC27614 and UCC57108, support a maximum of 30V. Do you plan on implementing a separate voltage line for the gate driver?

    Thanks,
    Rubas

  • Hi Rubas,

    We also have 8V supply voltage. So how can we use the CSD19532Q5B mosfet circuit with the UCC27614 gate driver?

    Can you provide us with a schematic with the recommended resistor and capacitor values? We are preparing for high volume mass production.

    Thanks.

  • Hi Alev,

    If you have an 8V supply, then I would recommend the UCC27614. We highly emphasize placing a VDD bypass capacitor as close to the driver as possible. If possible, two separate bypass capacitors would be beneficial. Typical values for these capacitors are 0.1uF and 1uF, with the 0.1uF capacitor being closer to the driver (1uF capacitor should also be closer to driver).

    Next, we recommend placing a small RC filter on the input pin. Even if you do not foresee noise, the footprint for those components is recommended to be in the layout anyways. If you are utilizing the enable pin, then another RC filter is recommended for that pin. If you are not intending to use it, then we recommend pulling it up to VDD with a 10k resistor.

    Moving on to the output side, we recommend having footprints for gate resistors. This makes it easier to swap out different resistor values when testing. Typically, a faster turn-off is desired, so an antiparallel diode is also recommended. You can read more about it in this FAQ. We also recommend a gate-source resistor of at least 10k, though I see that you already have that in the schematic you sent earlier (R2).

    If you believe there could be output transients in your system that may damage the driver, you could add clamping diodes to the output. You can read about it in this FAQ.

    Please let me know if you have any questions.

    Thanks,
    Rubas

  • I have a few questions;

    a) What values ​​do you recommend for the RC filter on the line from the MCU to the input pin of the UCC27614 driver? MCU output pin -> Driver IN+ pin

    b) Sometimes drivers are driven with a single PWM output (IN+) and sometimes with two PWM outputs (IN+ and IN-). Is it possible to drive this driver in both ways? Actually, we prefer to drive it with a single PWM (IN+) signal.

    c) Doesn't the UCC27614 product need a bootstrap capacitor? And Why ?

    d) Do you have another suggestion for the line from the gate driver to the MOSFET in the attached picture?

  • Hi Alev,

    For the input filter values, I would recommend a resistor value between 10 to 100 Ohms and capacitor value between 10 to 200 pF. For reference, our EVM uses 49.9 Ohms and 10pF.

    If you use the DSG package, you have the option to use either IN+ or IN-. If you are using only IN+, then you should tie IN- to GND. If you are using only IN-, then you should tie IN+ to VDD.

    Bootstrap capacitors are needed for driving high-side FETs (floating source). In this case, the FET is being used in a low-side application (grounded source), so no bootstrap capacitor is needed. However, the VDD bypass capacitor is needed in all cases.

    The output line looks good to me.

    Thanks,
    Rubas

  • Hi Rubas;

    Before you, dear John, he told us about the CSD18543Q3A product. This is a 60V transistor.

    I would like to ask a few questions about this subject;

    a) Is it possible to drive the CSD18543Q3A product with the same schematic as the UCC27614? Without making any changes to any electrical elements?

    b) Since a solenoid is driven, it is considered to use an ultra-fast 1A diode to protect it from reverse current. In this case, do you think it would be more useful to use a 100V transistor instead of 60V to protect the transistor from reverse current?

    c) The solenoid is driven with 48V momentarily (about 1/4 of a second) to pull back its stroke at the first opening. This is the energy required to pull back its stroke without difficulty. Then, an average of 5V energy is enough to keep its stroke inside. When first powered, it draws about 0.8A current when supplied with 48V. Considering that it is driven with PWM, is both a fast diode and 60V a sufficient precaution for reverse current? Or does the 100V transistor provide a longer life and more durable circuit?

    Thank you.

  • Hi Alev,

    Our gate drivers can drive most FETs on the market. It looks like the CSD18543Q3A could be an even faster option due to the lower gate resistance, input capacitance, and gate charge.

    For questions b and c, I would be more inclined to use the 100V FET for extra precaution, but I believe John would be able to answer those questions more accurately, so I will loop him back in the thread.

    Thanks,
    Rubas

  • Hi Alev,

    The breakdown voltage rating of the FET has nothing to do with the reverse current thru it. The higher breakdown voltage will protect against possible avalanche if VDS exceeds BVDSS. You can go to a 100V FET such as the CSD19538Q3A. The on resistance is higher and you will need to provide at least 6V gate drive.

    Thanks,

    John