Tool/software:
Hi, TI expert
The customer applied BQ24610 and made a board and tested it, but there is a heat generation issue in ACFET P-channel power MOSFET.
The review contents are as follows.
1. BQ24610 EVM circuit was used.
- Below is the circuit diagram. Please refer to it. ( ACFET_Q2 : This is SI4401BDY-T1 (VISHAY) used in BQ24610EVM.)
2. Electrical specifications
- Input: 24V / Max. 10A
- Load: 24V / Max. 6.5A
3. Problem: When 24V/6.5A load is applied to V-SYS at room temperature (25℃), the temperature of ACFET (Q2_SI4401BDY) component exceeds 75℃.
Question 1) Will the heat generation of ACFET (Q2_SI4401BDY) component be reduced if R24, R21 value is reduced or 0 ohm is processed?
Question 2) The component specifications of Q1 and Q2 are sufficient for the maximum 10.5A, but should I increase the capacity further?
Question 3) Is there a way to lower the temperature of the ACFET (Q2_SI4401BDY) component to below 65℃?
Please check. Thanks