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UCC21710: High-Side SiC MOSFET Gate Driver Layout Guidelines

Kartavya Agarwal
Prodigy 90 points
Part Number: UCC21710


Tool/software:

Hi,

I am using the UCC21710 to drive a high-side SiC MOSFET. The layout guidelines in section 10 of the datasheet recommends that a plane/copper pour for the the COM pin (which in this case would be connected to Kelvin Source of MOSFET) should not be used due to this node also being the switching node.

However, wouldn't a copper pour help with shielding and minimizing overall stray inductance for the gate driver loop?

Thank you for any insight that you might be able to provide.

  • +1
    TI__Mastermind 23226 points

    Hi Kartavya,

    I agree with you. It seems that this datasheet bullet is referring to a ground plane explicitly, not just a copper pour that is tied to COM. ON the high, side, most of our EVMs have a high-side switch node COM plane that minimizes Vgs inductance and sheilds noise.

    Best regards,

    Sean

    "• If the gate driver is used for the low side switch which the COM pin connected to the dc bus negative, use the ground plane on the output side to shield the output signals from the noise generated by the switch node; if the gate driver is used for the high side switch, which the COM pin is connected to the switch node, ground plane is not recommended."

  • 0 in reply to Sean Cashin
    Prodigy 90 points

    Thanks for the clarification Sean.