CSD17579Q5A: Circuit for accelerating the discharge of the MOSFETs gates capacitance

Suslik Shkratslov

Part Number: CSD17579Q5A

Tool/software:

Hello, Texas Instruments team! 

I asked this question on the Power management forum using the part 
number of the BQ40Z50 chip, and they sent me to you. 

The question is:

Is it possible to add resistor R2 and diode VDZ2 in parallel to 
resistor R1 in the MOSFET gate circuit to speed up the closing of the MOSFET?

11 months ago

+1 John Wallace1 11 months ago

TI__Mastermind 40580 points

Hello Suslik,

Thanks for your interest in TI FETs. Yes, this is a common method to speed up turn-off of the FET by reducing the effective gate resistance. The diode will block at turn-on making the effective gate resistance higher and slowing down the FET switching. I believe it should work OK. Please let me know if you have any additional questions.

Best Regards,

John Wallace

TI FET Applications

0 Suslik Shkratslov 11 months ago in reply to John Wallace1

Prodigy 80 points

Thanks for the answer!