Other Parts Discussed in Thread: BQ25756
Tool/software:
Hi TI team,
We are currently developing with the BQ25750 and have observed ringing on the switching node.
Here are our test conditions:
-
Switching frequency: 350 kHz
-
Buck mode: VIN = 13.6V, VBAT = 10.95V
-
Boost mode: VBAT = 10.95V to 9.6V, VSYS = 12V
Due to PCB size limitations, the inductor and the 4 power-stage MOSFETs (Q5–Q8) are placed on different layers (Top and Bottom).
We are wondering if this layer separation could be a major contributor to the ringing we are seeing.
We have tried adding a snubber circuit (R = 2.2Ω, C = 100pF), but the improvement is minimal.
Could you please provide recommendations on how to reduce the ringing (e.g., optimized snubber values, layout guidelines, or gate drive tuning)?
Any insights would be greatly appreciated. Thank you!
Best regards,
Tom