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UCC28C43: How to Optimize EMI and Heating in Push-Pull UCC28C43 + UCC27714 Design?

VBsemi MOSFET
Prodigy 150 points
Part Number: UCC28C43
Other Parts Discussed in Thread: BQ34Z100-G1, UCC27714, , CSD19502Q5B

Tool/software:

Hi team,

Using BQ34Z100-G1 + UCC28C43 (controller) + UCC27714 (driver) + CSD19502Q5B NexFETs in a 100W push-pull isolated DC-DC (24V→12V/8A, 100kHz), we face:

  • Strong 180–250MHz EMI spikes, partially reduced with RCD snubber, but increasing switching losses.

  • MOSFET case temp hits 85°C+ under 80W load with forced cooling.

  • Slower gate drive reduces EMI but increases heating; faster edges exceed EMI limits.

Layout is clean; transformer leakage ~1uH.

Questions:

White check mark How to further reduce EMI spikes without much loss increase?
 White check mark Quick tuning methods for snubber parameters in push-pull with UCC28C43?
 White check mark Layout/shielding best practices for NexFET to manage EMI while maintaining thermal performance?

Appreciate any practical tuning advice!