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UCC28C43: How to control EMI spikes and MOSFET heating in push-pull with UCC28C43?

VBsemi MOSFET
Prodigy 150 points
Part Number: UCC28C43
Other Parts Discussed in Thread: BQ34Z100-G1, UCC27714, , CSD19502Q5B

Tool/software:

Hi all,

Using BQ34Z100-G1 + UCC28C43 + UCC27714 + CSD19502Q5B in a 100W push-pull isolated DC-DC (24V→12V/8A, 100kHz), I see:

  • Strong 180–250MHz EMI spikes. Snubber reduces EMI but increases loss.

  • MOSFET stays above 85°C under 80W with forced cooling.

  • Slower gate reduces EMI but heats more; fast edge causes EMI fail.

Seeking:

White check mark How to reduce EMI spikes and MOSFET heating together?
 White check mark Quick way to tune snubber in push-pull?
 White check mark Any proven layout/shielding tips with NexFET in fast push-pull?

Thanks!

  • 0
    TI__Guru 73265 points

    Hi,

    - optimize your board layout, with high current high frequency loop area small, and may high dv/dt copper small

    - reduce spikes - snubber and slow down switching speed

    - shielding transformer and inductors

    - adding EMI filter

    - Adjust inductor, transformer and capacitor orientation.