TPS552882-Q1: TPS552882-Q1: Inductor overheating on 3.3V and 5V outputs

Hi,

Please show me the schematic, and check your design by the calculation tool. SLVRBF9 Calculation tool | TI.com Thanks.

All component calculations have been performed as per the tools provided by Texas support, but still the IC and MOSFET are heating excessively and getting damaged. Kindly advise on further steps to resolve this issue.

Hi,

Please share the schematic here. And could you describe in detail about your issue?

As soon as the supply is applied, the MOSFET, IC, and inductor start heating up even without any load connected. Please assist in resolving this issue

Hi,

I see you use 50k Fsw resistor so Fsw is 400kHz. Then the inductor should be at least 4.7uH. See below section in datasheet.

And change the comp value to Rcomp=33k, Ccomp=10nF, Chf=1nF as a start point.

Please assist me with these three circuits by identifying which components need to be replaced and their new values, without changing the inductors.

Hi,

The inductor needs to be at least 4.7uH if you choose 400kHz Fsw.

For 12V circuit, Change C42=10nF, R25=33k, C3=1nF. And same change to the other circuits.

ok thanks.sir i will share the results after replacing the components.

OK

I tested the circuit as per your advice and replaced the component. When I powered it from a UPS (BQ24610, 3S), it’s working fine. However, when I provide 19V from an adapter, the circuit causes issues and the MOSFET gets damaged. suggest me for next

  the layout

Hi Kamlesh,

The expert is OoO this week, please expect a late response. Thanks.

BRs,

Bryce

ok will waiting for Mr.shipeng cheng reply

Thanks for the understanding.

Hi,

There should be a 100nF ceramic cap near MOSFETs. Otherwise spikes on MOSFETs is high and may damage the 30V MOSFETs.

ok thanks for the reply high side or low side mosfet and which pins need to placed the capacitor

The 100nF capacitor should be placed between high-side FET drain and low-side FET source, which means VIN to GND. But it should be placed as close as possible near MOSFETs.