Other Parts Discussed in Thread: LMG1205, LMG1210,
Right now, we are developing the new controller. We are looking for single GAN FET for replacement of back-to-back N-channel MOSFET. The back-to-back N-channel MOSFETs are used for reverse polarity protection and over voltage protection. It is used for high-side switches. We would like to replace two MOSFETs because of Rds(on). The GAN FET does not have body diode. When GAN FET is turned OFF, the current does not pass any directions (source to drain or drain to source). It can be used for reverse polarity protection. Is it correct? Can you please provide guidance for Gan FET drivers and GAN FET for high side load application?
