Part Number: LM27313-Q1
Other Parts Discussed in Thread: TLV61047-Q1
We are trying to use this part LM27313-Q1 and calculate the power loss and junction temperature based on the application we used. So I have two questions which need support, please help to check and share suggestions. I have found an similiar case raised before, Thanks.
- 10.3 has mentioned the conduction loss for the internal integrated MOS, please help to share the formula of switching loss and gate loss. Usually we will need additional parameter for the MOS which has not been mentioned in the datasheet ,like Qg, tr, tf. And whether the MOS power dissipation could represent the power loss for the ASIC? I have used WEBENCH to get the final power loss result, and it's a little larger than the result with only using the conduction loss formula mentioned in the datasheet. So it's better to get the detailed power loss calculation formula and I can display it in our analysis document.
- The thermal resistance of junction to ambient is 166 which is too high. whether the calculation in the WEBENCH directly use the Rthja multiply by the power loss to get the final junction temperature? Or any Kfactor has been used to reduce the Rthja?
I have searched a similar case raised in the platform and the answer has supported to share the detailed formula to the user, so I have same request, please also help to check it. Thanks.
