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Other Parts Discussed in Thread: LM5117EVAL, CSD19534Q5A, CSD19533Q5A

Dear Sir 

I use LM5117EVAL to verify 3 kind of MOS ,

The result is as below for Vin=48V to Vout=12V/6A

PSMN5R5-60YS (60V) ==> Spike = 60V and Efficiency = 94.5%

CSD19533Q5 (100V) ==> Spike = 93V and Efficiency = 91.5%

CSD19531Q5 (100V) ==> Spike = 91V and Efficiency = 90.5%

I can't make sure this result is correct

I use similar Iq MOS ,but have large spike

I use better rds(on) MOS ,but the efficiency is lower than higher Rds(on) solution

If we don't change any value of component on LM5117EVM and just change the MOS

Which solution is better that I can have the same efficiency (around 94%~95%) and have lower spike (Vin max = 57V ,continue is 48V)


  • Kai,
    Generally, for the best performance we would recommend using the CSD19534Q5A on the high side and CSD19533Q5A on the low side.

    What current are you driving when these measurements were taken. For lower currents, the CSD19534Q5A will be more efficient on the high and low side