**Other Parts Discussed in Thread:**CSD19506KCS, SM72295

Hi, I have a question relating to thermal considerations for the CSD19506KCS N-Channel NexFET Power Mosfet.

For the following values:

- Drain-to-Source Voltage, V(DS) = 12V
- Continues Drain Current, I(D) = 70A

What would the Drain-to-Source On Resistance, R(DS)on be to allow for the above values?

I am working on the assumption that the V(GS) voltage for the above would be: V(DS) + V(GS)TH = 12V + 2.5V = 14V.

Is this assumption correct?

Assuming an R(DS)on value of 2.0 mΩ (closest match on the DataSheet), can the Power Dissapation P(D) be calculated as follows:

P(D) = I² x R(DS) = (70)² x 0.002Ω = 9.8W ? (if not please provide clarity).

Working from a starting ambient temperature, T(A) of 25°C, how can I calculate the temperature increase for the calculated power consumption?

Do I work on 0.4°C/W temperature increase (as per DataSheet) or do I need to consider additional parameters?

Any insight into this would be greatly appreciated.

Also, can anyone recommend a good application note on balancing parallel power mosfets?