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LM5111: Reflow condition about LM5111

Part Number: LM5111

Dear Expert,

Thank you for your support everyday.

My customer has a question about reflow condition of LM5111.

Are there restrictions on temperature, time, number of times at reflow?

Best,Regars.

Fukazawa

  • Hello Fukasawa,

    I am an applications engineer in the High Power Driver group and will address your questions. There are handling and process recommendations based on the package type from TI. There is an application note, AN-2029 that convers the guidelines for soldering process. The temperature and time limits are based on the device package type. There are two packages offered in the LM5111, so review the appropriate limits.

    The link for the applications note is: http://www.ti.com/lit/an/snoa550e/snoa550e.pdf

    Please confirm if this answers your questions on the response in the thread.

    Regards,

    Richard Herring

  • Dear Richard-san,

    Thank you for your information about re-flow.
    There is two things I want to check about LM 5111 - 1 MX.
    Please tell me the values (min, typ, max) of the following items.

    · Power dissipation PD
    · Operating temperature

    Best,Regars.
    Fukazawa
  • Hello Fukazawa-san,

    On the question of power dissipation this is dependent on a number of factors including the PWB layout and operating ambient temperature. A general guideline in the LM5111 datasheet: http://www.ti.com/lit/ds/symlink/lm5111.pdf is found in Table 7.4 thermal information. The RƟJA is the junction to ambient thermal resistance with a specific board layout pattern. The power dissipation base on this would be the Maximum recommended temperature of 125 deg C- Maximum ambient divided by the RƟJA. Or (125 degC - tAMB)/112.2 degC/W.

    The recommended operating temperature is 125 deg C specified in Table 7.3.

    To verify the temperature in the design; calculate the power dissipation by the method shown in datasheet Section 11.3. Measure the top of the IC package with a small gauge thermocouple. With a known power dissipation, you can calculate the junction temperature using the Junction-to-top characterization parameter. The tJ is the temperature measured on the top + Pd x 9.4 degC/W, for the SOIC package.

    Please confirm if this answers your questions.

    Regards,

    Richard Herring