CSD25481F4: BREAKDOWN VOLTAGE GATE-SOURCE

Chuck,

Thanks for posting.

In answer to your questions:
(a) Is the gate protection diode a zener or avalanche (low current of course) capable device ?
It is a zener like avalanche capable vertical diode. The CSD25481F4 gate clamp diode is capable of sourcing current, the specifications are on the front page of the datasheet , for this device it has a maximum 35mA capability and pulsed capability of 350mA.
(b) When I measure Vgs breakdown, am I measuring the diodes breakdown or the oxide breakdown ?
The gate clamp  diode breakdown.
(c) If I am measuring a diode breakdown, what is the approximate breakdown of the gate oxide ?
 Clamp diode breakdown is set below oxide value, if there was no clamp diode the oxide would have a rating of ~16V

Hi Chris, Thanks. Is the 16V oxide rating the oxide breakdown voltage, or is it the Vgs rating which is normally less than the oxide breakdown. ?

See my follow up below. Response did fundamentally answer my questions, but I just need a clarification on the 16V Vgs rating as mentioned. I just need to know if the 16V is the typical breakdown of the oxide, or is the mentioned 16V the rating of the MOSFET Vgs (oxide breakdown would therefore be higher). Thanks.