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TPS43060EVM-199: purpose of multiple vias on the input pad of boost inductor L1

Part Number: TPS43060EVM-199

Hello,

I am trying to determine the purpose of multiple vias on the input pad of boost inductor L1.  Per layout figures 19, 20, 21, 22 of User's Guide (SLVU828A), these vias appear isolated on all underlying layers.

I would appreciate your comments regarding this.

Best regards,

Nitish Agrawal

  • Hi Nitish,

    good catch! I think the vias are not required in real application.
  • Hello Jasper,
    I have another question. TPS43060EVM-199 User's Guide (SLVU828A) section 4.1 says "The ground return for the power components are connected to the PGND pin."

    However, I cannot see a connection between the source of low-side MOSFET Q2 and PGND in layout figures 19 - 22. Similarly, I can't see the filter capacitors' (C2, C3, C4, etc.) low side connected to PGND. These connections are, however, shown in schematic Fig. 1 (but do not appear to be reflected in layout).

    Would you please help clarifying? I am in the middle of layout.

    Regards,

    Nitish Agrawal
  • Hi Nitish,
    there are two vias place on the top layout closed the PGND (PIN 9). the right one is connected to the power gound panel in the middle layer.
  • Hi Jasper,

    Thank you for your response and your time looking into my question. I should have looked more carefully. A few more related questions, if you don't mind:

    1) In our application, we have reduced the inductance to 8uH from the 15uH present on the evaluation board, while the output current is ~3A continuous. This will cause higher peak switching currents through the low side MOSFET and the filter capacitors.
    Will a single via (similar to right side one that you referred to) have enough ampacity to carry the higher magnitude switching currents from the power ground panel to the PGND pin trace?

    2) I am assuming that the connection between the power ground panel to PGND pin should be as low inductance as possible. Is that correct?

    3) How much inductance is allowable between AGND and PGND so that it doesn't affect high frequency switching performance at ~500kHz?
    For instance, is it advisable to use an external jumper for this connection?

    Kind regards,
    Nitish Agrawal
  • Hi Jasper,

    I trust you are well. Would you mind responding to our latest three questions posted on Oct. 11 (repeated below for your convenience):

    1) In our application, we have reduced the inductance to 8uH from the 15uH present on the evaluation board, while the output current is ~3A continuous. This will cause higher peak switching currents through the low side MOSFET and the filter capacitors.
    Will a single via (similar to right side one that you referred to) have enough ampacity to carry the higher magnitude switching currents from the power ground panel to the PGND pin trace?

    2) I am assuming that the connection between the power ground panel to PGND pin should be as low inductance as possible. Is that correct?

    3) How much inductance is allowable between AGND and PGND so that it doesn't affect high frequency switching performance at ~500kHz?
    For instance, is it advisable to use an external jumper for this connection?

    Kind regards,

    Nitish Agrawal
  • Hi Nitish,
    sorry for the delay as busy these days.
    1. the current through the inductor doesn't flow between the IC PGND pin and the power ground panel. only the driving current flows between the IC and the power ground. so one via is good enough.

    2. yes, but i think one or two vias to the power ground panel is good enough.

    3. i don't suggest external jumper if not special reason. the AGND and PGND connection can be following the EVM.