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CSD17585F5: CSD17585F5 Vgs maximum value

Sunset
Genius 13995 points
Part Number: CSD17585F5


Hello Team,

by the CSD17585F5 is written that the maximum Vgs should be +20V. On other MOS datasheet from other vendors I do see that they do specify max +-20Vgs for an N channel MOS.

What does really mean -20V within the spec of an N MOS?

Below Vth is off so below 0 would be off. Does the CSD17585F5 support -20V without getting broken?

Can I retrieve that info from the datasheet?

Is it a different way to specify the device or it has to do with the internal structure and diodes?

Thanks,

SunSet

  • 0
    TI__Expert 7915 points
    Sunset,

    Thanks for the question.
    The reason that -ve is not specified on this particular device is because of the particular gate ESD protection structure used. It uses a single ended diode ESD structure which has far superior leakage characteristics vs the back to back ESD gate structure used on many other FETs.
    This means that if you apply a -ve voltage on the gate this diode will conduct from source to gate.
    If the application is going to provide a -ve voltage on the gate then you need to make sure that the power dissipation on the gate is <0.25W.
  • 0 in reply to Chris Bull
    TI__Genius 13995 points
    Thanks for the info.
    I was suspecting something to do with the internal diodes.

    Thanks,

    SunSet