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UCC28C40: Issue: MOSFET damaged

Wenhsiang Lin
Intellectual 520 points
Part Number: UCC28C40

Hi Team:

RD feedback ~ when output EE load setup up max load 6A ,MOSFET(Q4) will damage and RD setup up 0.5A to catch Vds(Ch1) & Id(Ch2) waveform of MOSFET.

Condition as below , schematic and waveform as attached , thanks.

Vin_min=13V , Vin_max=24V

Vout=12V , Iout=6A

turns ratio=3:6

Lp=800nH

Pls help to confirm  

1.MOSFET damage issue

2.What kind of condition will cause MOSFET(Q4) damage besides transforemer saturation?

Thanks a lot.

Regards / Mark

3021.YIAPFJ1907T---- 0531.pdf

  • 0
    TI__Mastermind 26225 points

    Hi Mark,

    Based on your 3rd waveform, it looks like the max drain voltage is ~75V. This is extremely close to the 80V absolute maximum rating for the CSD19502 device. I would expect the ringing to be worse at higher load as well and likely why the MOSFET was damaged. You could try adjusting your snubber to further dampen the ringing, use a MOSFET with higher Vds rating or try to reduce parasitic leakage inductance of the transformer.

    Best Regards,

    Ben Lough