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TPS22919: Integrated Load switch and Discrete FET Inrush current control Loss comparison

Part Number: TPS22919

Dear Sir,

TPS22919 integrated load switch is better in all the ways compared to Discrete FET method.I wanted to use discrete FET method as shown below, Could you please tell the power dissipation constraint on the MOSFET during the llinear region where the inrush current is limited. How to calculate the max dissipation limits during this time interval.

Thanks & Regards,

Nesh

  • Hi Nesh, 

    Thanks for reaching out on E2E!

    I'm not sure if I understand the question correctly. You mentioned that the TPS22919 is better in all ways compared to the discrete FET, but you would like to go with a discrete FET implementation?

    In general, the power dissipation in the discrete FET will be dependent on the SOA curve given in the FET datasheet. 

    Thanks,

    Arthur Huang