Dear,
I use the CSD17308Q3 FET for a high-side switch as shown in the picture, in my circuit which imitates a TI's evaluation board of a driver IC, where the R1 = 5 KOhm, R2 = 10 Mega Ohm.
The application is Li-Ion battery over-discharge protection.
Over a month, I noticed a suspicious leakage current through the FET while the gate driver output is tri-state.
Would you reassure that the resistor R2 10MOhm, between the gate and drain, is sufficient to remain the FET off-state?
Thanks,
Joshua Kim
