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CSD25402Q3A: Rdson value of CSD25402Q3

takahiko yokota
Mastermind 7135 points
Part Number: CSD25402Q3A

Hi

I got a question about CSD25402Q3A from my customer.
Are there the data Rdson vs Id of Id=-0.1A, -1A, -3A etc except Id=-10A?

Best regards,
Yokota
  • 0
    TI__Mastermind 29525 points

    Hi Yokota-san,

    Thanks for promoting TI FETs at your customer. We don't have data at those other current levels. During initial characterization, we tested rds(on) under the following conditions:

    VGS = -1.8V & ID = 4A

    VGS = -2.5V & ID = 10A

    VGS = -4.5V & ID = 10A

    I would not expect much variation of rds(on) at lower current levels. Our test is a short duration current pulse to prevent self heating of the device which can cause rds(on) to increase because of the positive temperature coefficient.

  • 0 in reply to John Wallace1
    Mastermind 7135 points

    Hi John-san

    Thank you for quick response.
    Could you tell me Ronds at Vgs=1.8V and Id=4A?

    Best regards,
    Yokota
  • 0 in reply to takahiko yokota
    TI__Mastermind 29525 points

    Hi Yokota-san,

    The average rds(on) for samples from 3 lots is around 70mOhm @ VGS = 1.8V & ID = 4A. There is a wide spread between the minimum and maximum measured values. This is expected because if you look at the rds(on) vs. VGS curve on page 1 of the datasheet, VGS = 1.8V is well below the knee of the curve and the slope is almost vertical. Our guaranteed max limit in the datasheet is 300mOhm @ VGS = 1.8V.