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Original question:

CSD15380F3: Maximum drain-to-source leakage on datasheet

CSD15380F3: Leakage current

ROGER BORZUMATI
Prodigy 170 points
Part Number: CSD15380F3

Good morning, I am searching for a NMOS for open drain application with a pull-up of 30Mohm connected to 3V. My requirement is that drain voltage in nmos OFF condition (VGS=0)remains at least 1V, so the

Drain-to-Source leakage current must be very low nA. After some research I find the p/n in object that seems to be the best component for this application. But my condition is different from the datasheet so I am not able to estimate IDSS current when VGS=0V and Vpull up=3V (in the datasheet there is only VGS=0V, VDS=16V IDSS=50nA max). How about that ? Can I have a value for lekage current?

Thank you, regards.

  • 0
    TI__Mastermind 36530 points

    Ho Roger,

    Thanks for your interest in TI MOSFETs. The only IDSS leakage value that we can guarantee is at the conditions specified in the datasheet: VGS = 0V, VDS = 16V, T = 25C, and IDSS <= 50nA maximum. We have characterization data for samples from 3 lots at VDS = 5V and the average value @ 25C was around 1nA with a maximum measured value < 10nA. Please note: IDSS has a positive temperature coefficient. For example, the mean value @ VDS = 5V increases to around 3nA @ 125C. Just a reminder, we only test at the conditions in the datasheet and cannot guarantee IDSS at other conditions. I hope this helps you.

  • 0 in reply to John Wallace1
    Prodigy 170 points

    Good morning, thank you for the reply. I will consider this infromation for my application.

    Best regards.