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LM5106: LM5106: Output resitance

user6180951
Prodigy 70 points
Part Number: LM5106

How much is the output resistance of LM5106?

( HO high, HO low, LO high, LO low)

And how much do they vary?(max, typ, min)

Best regards,

Junichi Nomura

  • 0
    TI__Mastermind 21555 points

    Hello,

    Thank you for the interest in the LM5106. The driver output resistance can be determined by the driver output saturation voltages, VOLL, VOHL (for the low side driver, and VOLH and VOHH for the high side driver. The test condition is 100mA so the resistance is 10x the saturation voltage. See the parameter table below.

    The low side driver and high side driver pull down resistance is 2.1 Ohms typical and 4 Ohms Max, the low side driver and high side driver pull up resistance is 5 Ohms typical, 8.5 Ohms Max.


    Confirm if this addresses your questions or you can post additional questions on this thread.

    Regards,


  • 0 in reply to Richard Herring
    Prodigy 70 points

    Hello,

    Thank you for your answer.

    I have further question.

    How do the curves on HO and LO Peak Outpur Current vs Outout Voltage (Fig.9 in LM5106 data sheet) change along with output resistance at 100mA change?

    Do they change inverse proportionally?

    Best regards,

    Junichi Nomura

  • 0 in reply to user6180951
    TI__Mastermind 21555 points

    Hello Junichi,

    The driver peak current is not just determined by the driver resistance and VDD, or VHB. The driver internal device gain parameters and pre driver input voltage will limit the driver output current to less than just the driver resistance and driver source voltage.

    Since the driver current is limited to a lower value than just the resistance and votlage, the apparent resistance will increase as the voltage across the driver increases.

    Confirm if this addresses your questions, or you can post additional questions on this thread.

    Regards,

  • 0 in reply to Richard Herring
    Prodigy 70 points

    Hello Richard,

    Thank you for your answer.

    I have further question.

    I want to know the influence of HO and LO Peak Outpur Current vs Outout Voltage characteristics change on drived MOSFETs switching characteristics.

    How  can I simulate the influence of the change of the driver internal device gain parameters and pre driver input voltage by LTSPICE?

    Best regards,

    Junichi Nomura

  • 0 in reply to user6180951
    TI__Mastermind 21555 points

    Hello Junichi,

    The 1st potential concern is that the device models provided by TI are confirmed with PSPICE. We have had reports of syntax and other errors with other simulators such as LTSPICE which we cannot support.

    The reduction of gate drive capability can be simulated by adjusting external gate resistance to increase the total driver plus external resistance. Add 2 Ohms for the turn off resistance and ~3.5 Ohms for the turn on resistance to simulate the higher total resistance.

    Confirm if this addresses your questions or you can post additional questions on this thread.

    Regards,