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BQ24715: layout of mosfet CSD17308Q3

HARINI KRISHNA
Expert 1905 points
Part Number: BQ24715
Other Parts Discussed in Thread: CSD17308Q3

Hi,

We are using BQ24715 as charger ic for application. 

While going through the EVM module of BQ24715 the Fet CSD17308Q3 ( Q4 in data sheet and  Q2 in EVM module) had a large area left out around it. On looking into the data sheet of the FET, we found out that it was the recommended layout.

For our design we have PCB space constrain and we cannot have such large area for the FET.

Can we go for a heat sink instead?

Could you please suggest a solution for this?

Thankyou

Regards

Harini Krishna

  • 0
    TI__Mastermind 25800 points

    Hey Harini,

    This is typically recommended to reduce the impedance (especially inductance) of the discontinuous switching current path AND also increase the heat dissipation capability of the PCB.

    You can opt for a heat sink with thermal paste for heat dissipation. However, i would also recommend you keep the input loop very tight (from the input capacitors --> HSFET --> LSFET --> ground). I would also try an maintain a low inductance input path.

    Regards,

    Joel H