Hello. I have a question regarding the parameter of thermal resistance of Junction to case, specified at 1.5°C/W.
The notes state:
RθJC is determined with the device mounted on a 1-in2 (6.45-cm2 ), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81- cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-in2 (6.45-cm2 ), 2-oz (0.071-mm) thick Cu
I would like to confirm my interpretation of the first note. I interpret this note as follows:
1) TI has derived (measured) the junction to case parameter of 1.5°C/W by using the test conditions cited in note 1.
2) "RθJC is specified by design" means specified for the MOSFET design as opposed to the board design: so I conclude that the junction to case parameter of 1.5°C/W is constant for all board designs, while RθJA varies with board design.
Can you confirm my understanding?
IN our applications. we are using a FLIR camera to measure the case temperature of the MOSFETs under load, and then we would like to use RθJC to calculate the junction temperature, based on MOSFET power dissipation.
Thanks, Charie.