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LMG3410R050: GaN VDS minimum required

Bhanuprakash Nayak51
Prodigy 70 points
Part Number: LMG3410R050

What is the minimum VDS in which GaN can operate ?

We will have voltage of around 0.75V to 1.5V on the drain terminal. What is the max Drain to source current I can drive from LMG3410R050 GaN device ?

Regards,

Bhanuprakash Nayak

  • 0
    TI__Genius 16390 points

    Hi Bhanuprakash

    Thanks for contacting us. For our device there is no minimum VDS requirement. However, I think it is an overkill to use our 600V device on this application.

    As for the maximum Ids, if it is the DC current, then it should be lower than 12A for long time operation. During transient, the current can go to 27A assuming junction temperature of 100 degree. Also it can withstand current up to 130A if the pulse is <1us. If it is AC current, then the 12V limit will be applied to the average current. As for the RMS current, the thermal is limiting factor, and the max current should be under the 27A as well.

    May I know what the application is for and why are you considering GaN here (what are the benefits you are trying to get out of it)?

    Thanks!

    Regards,

  • 0 in reply to Yichi Zhang.
    Prodigy 70 points

    Thank a lot for your quick response Yichi.

    We are planning to design a new tool which can validate the our mother boards Voltage regulators.

    We sink current through this GaN to emulate the processor behavior. So that platform VRs can be validated.

    We will have VDD of around 0.75V to 1.5V and current of around 220A max. We can consider doing parallelization here.

    What's the resolution I can achieve with this GaN, let's say if I am planning to drive 1A to 1.005A. Can this small step be achieved ?

    Prime reason of considering GaN is that we need very high rise time requirement, more current and lesser real estate.

    Thanks and Regards,

    Bhanuprakash Nayak

  • 0 in reply to Bhanuprakash Nayak51
    TI__Genius 16390 points

    Hello Bhanuprakash,

    Is the current going to be just one short pulse? How long the 220A current will last per pulse?

    Yes 1A to 1.005A is achievable. I think that has more to do how you control your supply, since once GaN is on, it can drive whatever current go through it. 

    For our GaN, we can achieve around 100V/ns slew rate. What is your rise time requirement? Also I am not sure about the more current and lesser real estate statements here. Can you elaborate on those?

    Regards,

  • 0 in reply to Yichi Zhang.
    Prodigy 70 points

    Hi Yichi,

    It is not going to be a short pulse. This is the continues current. We also have pulsed current requirement but my understanding is that GaN can very well manage that.

    When you siad "Yes 1A to 1.005A is achievable. I think that has more to do how you control your supply", Do you mean all the current flown along from Drain to Source is solely dependent
    on the Gate Drive and not on what voltage the VDD is tied to ?


    100V/ns is more than sufficient for our design. We are currently using MOSFETs now and it takes more area and current limit is lesser. And we use OP-AMPs to drive the gate of the FET.


    In the SOA graph the spec is defined upto 600V and lower voltage values are not very clear. My understanding is that VDS solely depends on the current flown across the RDS-ON.
    Then how can one reach 600V across VDS ?

    We will have aroudn 1V connected to VDD, Gate will be driven by OP-AMP, Can I drive 12A continues current ?

    Thanks and Regards,
    Bhanuprakash Nayak

  • 0 in reply to Bhanuprakash Nayak51
    TI__Genius 16390 points

    Hello Bhanuprakash,

    We usually refer Vdd as supply voltage for GaN device. When you say Vdd, you meant the bus voltage applied to the drain right?

    The 600V (should be under 480V according to SOA for safe operation) Vds datasheet is referring to is the voltage across the device when the GaN is off. This is the maximum voltage you can apply the bus voltage across the GaN device for it to hold off. While device is on, the Vds will be Rdson*Ids. Say your bus voltage is 1.5V, and the current is 1A, then while device is on, the voltage at the source of the GaN will be 1.5-1*0.05=1.45V. Again, amount of current you are supplying depends on your application.

    Also 12A continuous current is okay.

    Regards,