According to the datasheet, CSD19537Q3 has Rθjc of 1.5°C/W and RθjA of 55°C/W.
Do you have data about ψjt or ψjb?
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Hello Nishimura san,
Thanks for your interest in TI FETs. Unfortunately, we do not provide the thermal parameters you are requesting for power MOSFETs. I am providing links to the following documents: a blog on how TI specifies thermal impedance in our FET datasheets and (2) a technical article on how much power can be dissipated in our FET packages. As you will see, RthetaJA is specified on a standard, single layer board with minimum and maximum copper pads. This is not always representative of an actual application. Depending on layout and stackup, I have seen RthetaJA down around 20C/W or better for these types of packages. Keep in mind, the only thermal parameter TI can control as the MOSFET vendor is RthetaJC. The effective RthetaJA in your application is very dependent on board layout and stackup along with the specific environmental conditions in your application including airflow, use of heatsink and etc.