Other Parts Discussed in Thread: TIDA-00778
Why would it be necessary to add external pull down resistors on GPIO pins when the gate driver inputs have 400k pull downs? Do parallel external pull downs (10k/100k) change SNR of the MCU digital ground or PWM oscillator being so close to the package pins? Has any engineer at TI verified the SNR change to the MCU from adding lower resistance external pull downs to the gate driver input pins near the GPIO ports? I have never noticed external pull downs on PWM oscillator drive pins in any TI schematic.
The only reason I can think of for dividing resistance of internal 400k pull downs is a mistaken belief it will speed up the fall time greater than datasheet shows. What would be the point of trying to force the fall time to be any faster than the datasheet specified output turn off fall time with 400k?
Yet in TIDA-00778 schematic we see 10k pull downs added to the PWM drive outputs. And when GPIO outputs enter high impedance during POR will not the 400k be sufficient to hold down the gate drive outputs, especially if EN holds gate drives disabled during POR? Perhaps the engineer failed to add 10k pull down to the EN pin and had a bad experience. Since the EN pin is pulled up to VDD (+15v) via 400k it easily clubs 3v3 GPIO port without adding external 10k pull down to EN pin. Adding 10k pull down to EN keeps gate drive outputs disabled 2v9 during a POR or BOR and GPIO drives entering high impedance state.