Dear PIC,
Our customer ask us the NexFET Structure and could you tell me the following questions.
If the MOS-FET has an element under the bonding pad, is there any evidence below that supports the strength and reliability of the interlayer insulating film structure against bonding stress?
-The aluminum layer of the bonding pad is formed sufficiently thick (reference 3um).
-A barrier metal is provided under the bonding pad to reduce bonding stress (example: TiN / Ti).
-It has been confirmed that cracks do not occur in the interlayer film even under the worst conditions of wire bonding stress (ultrasonic power, load, temperature, etc.).
-Reliability evaluation is performed that can detect intermittent defects such as load fluctuation monitors.
Best Regards,
